MRF6S18060NR1 MRF6S18060NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS ? 1800 MHz
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
12
47
Gps
VDD
= 26 Vdc
IDQ
= 600 mA
17 57
55
53
51
49
1920
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 60 Watts
?16
0
?4
?8
?12
?20
η
D
, DRAIN EFFICIENCY (%)
16
15
14
13
ηD
1780 1800 1820 1840 1860 1880 1900
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
12
1760
33
Gps
VDD
= 26 Vdc
IDQ
= 600 mA
17 43
41
39
37
35
1920
IRL
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 30 Watts
?16
0
?4
?8
?12
?20
η
D
, DRAIN EFFICIENCY (%)
16
15
14
13
ηD
1780 1800 1820 1840 1860 1880 1900
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout= 35 W Avg.
25 W Avg.
15 W Avg.
VDD
= 26 Vdc
IDQ
= 450 mA
EVM, ERROR VECTOR MAGNITUDE (% rms)
1920
0.5
4.5
1780
3
2.5
1.5
1860
1840
1820
1800
3.5
2
1880
4
1
1900
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1860 MHz
EDGE Modulation
8
6
0
10
1
2
20
50
40
30
0
10
TC
= 25
C
ηD
η
D
, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM
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